sct3105kr-尊龙凯时ag旗舰
1200v nch 4引脚封装 sic（碳化硅）mosfet
sct3105kr
sct3105kr是非常适用于要求高效率的服务器用电源、太阳能逆变器及电动汽车充电站等的沟槽栅结构sic mosfet。采用电源源极引脚和驱动器源极引脚分离的4引脚封装，能够充分地发挥出高速开关性能。尤其是可以显著改善导通损耗。与以往的3引脚封装（to-247n）相比，导通损耗和关断损耗合起来预计可降低约35％的损耗。
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
本产品不建议使用于车载设备。
主要规格
特性：
drain-source voltage[v]
1200
drain-source on-state resistance(typ.)[mω]
105
generation
3rd gen (trench)
drain current[a]
24
total power dissipation[w]
134
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-55
storage temperature (max.)[°c]
175
package size [mm]
16x23.45 (t=5.2)
特点：
- low on-resistance
- fast switching speed
- fast reverse recovery
- easy to parallel
- simple to drive
- pb-free lead plating ; rohs compliant
evaluation
board
-
- evaluation board
- p02sct3040kr-evk-001
- for evaluating rohm’s sct3040kr (1200v/40mω/to-247-4l)
enables evaluation of other rohm sic mosfets by simply changing the circuit multiplier - in addition to the to-247-4l package, there are through-holes for to-247-3l that make it possible to perform comparative evaluations on the same board
- single power supply ( 12v operation)
- supports double pulse testing up to 150a and switching up to 500khz
- compatible with a variety of power supply topologies (buck/boost/half bridge)
- built-in isolated power supply for gate drive adjustable via variable resistor ( 12v to 23v)
- jumper pins enable switching between negative bias/zero bias for gate drive
- includes overcurrent protection (desat, ocp) along with a function for preventing simultaneous on of both upper and lower arms
- for evaluating rohm’s sct3040kr (1200v/40mω/to-247-4l)
